QBD-nano avalanche transistor Pockels cell driver

QBD-nano is an extremely compact Pockels cell driver producing high voltage pulses with high repetition rates, fast rise time and adjustable pulse amplitude. Wide temperature range of operation is another important feature.

It produces an up to 5 kV bipolar output voltage. Please, note that by bipolar device an output pulse voltage U is formed by applying +U/2 to positive output wire and –U/2 to negative.

QBD-nano is specially designed to control Pockels cells by applying a fast switching high voltage. The module requires +5 …+12 V DC power supply and a pulse generator to set an operating frequency. An output voltage level can be programmed in 0.8-1 U_MAX range by user either manually (through onboard configuration trimpot) or automatically (applying a DC voltage between respective pins).

Super-compact Pockels cell driver QBD-nano is based on avalanche transistors and offers fast transition time for a leading pulse edge. The recovery time by QBD-nano is relatively long (5-10 μs for the trailing pulse edge vs 1-3 ns by QBU-nano).

QBD-nano has some duration (on-time, “shelf”). It could be choosen at the time of order in 0.5-1 μs range. By default, it is 0.8-0.9 μs.

As alternative Q-switch driver, please kindly find:
QBD-series, up to 6 kV.
QBD-mini, compact version of QBD, up to 4 kV

Advanced Q-switch drivers are more improved, allow to change an output voltage level and advanced switching control to vary pulse repetition rate and width (long pulses, from 200 ns to CW). They provide pulses with both fast edges (< 15-20 ns) and allow to switch high voltage on the cryslal shortly before pull-down pulse to prolongate the crystal life-time.

QBU-series, up to 6 kV.
QBU-mini, compact version of QBU, up to 4 kV
QBU-mini-SP, compact version of QBU with short pulses, up to 4 kV QBU-10kV-series, up to 10 kV.